inchange semiconductor isc product specification isc silicon npn power transistor BD719 description dc current gain- : h fe = 40@ i c = 0.5a collector-emitter breakdown voltage - : v (br)ceo = 60v(min) complement to type bd720 applications designed for use in audio output and general purpose amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current-continuous 4 a i cm collector current-peak 7 a i b b base current-continuous 1 a p c collector power dissipation @ t c =25 30 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 3.5 /w r th j-a thermal resistance,junction to ambient 100 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BD719 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 30ma ; i b = 0 60 v v ce( sat ) collector-emitter saturation voltage i c = 2a; i b = 0.2a b 1.0 v v be( on ) base-emitter on voltage i c = 2a; v ce = 4v 1.4 v v cb = 60v; i e = 0 50 a i cbo collector cutoff current v cb = 30v; i e = 0; t c = 150 1 ma i ceo collector cutoff current v ce = 30v; i b = 0 b 0.1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 0.2 ma h fe-1 dc current gain i c = 0.5a; v ce = 4v 40 h fe-2 dc current gain i c = 2a; v ce = 4v 20 f t current-gain?bandwidth product i c = 0.5a; v ce = 4v 3 mhz switching times t on turn-on time 0.3 s t off turn-off time i c = 1a; i b1 = -i b2 = 0.1a;v cc = 20v 1.5 s isc website www.iscsemi.cn 2
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